bfy181 ifag imm rpd d hir 1 of 4 v 2 , february 2011 hirel npn silicon rf transistor ? hirel discrete and microwave semiconductor ? for low noise, high - gain broadband amplifiers at collector currents from 0,5 ma to 12 ma. ? hermetically sealed microwave package ? f t = 8 ghz f = 2.2 db at 2 ghz ? space qualified esa/scc detail spec. no.: 5611/006 type variant no. 03 esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code pin configuration package bfy181 (ql) - see below c e b e micro - x1 (ql) quality level: p: professional quality h: high rel quality s: space quality es: esa space quality (see order instructions for ordering example) 1 2 3 4
bfy181 ifag imm rpd d hir 2 of 4 v 2 , february 2011 maximum ratings parameter symbol values unit collector - emitter voltage v ceo 12 v collect or - emitter voltage, v be =0 v ces 20 v collector - base voltage v cbo 20 v emitter - base voltage v ebo 2 v collector current i c 20 ma base current i b 2 1) ma total power dissipation, t s ? 137c 2), 3) p tot 175 mw junction tem perature t j 200 ? c operating temperature range t op - 65...+200 ? c storage temperature range t stg - 65...+200 ? c thermal resistance junction - soldering point 3) r th js < 360 k/w note s.: 1) the maximum permissible base current for v fbe measurements is 15ma (spot - measurement duration < 1s) 2) at t s = + 137 c. for t s > + 137 c derating is required. 3) t s is measured on the collector lead at the soldering point to the pcb. electrical characteristics at t a =25c; unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector - base cutoff current v cb = 20 v, i e = 0 i cbo - - 100 a collector - emitter cutoff current v ce = 12 v, i b = 0,1a 1.) i cex - - 100 a collector - base cutoff current v cb = 10 v, i e = 0 i cbo - - 50 na emitter base cuttoff current v eb = 2 v, i c = 0 i ebo - - 25 ? eb = 1 v, i c = 0 i ebo - - 0.5 ? notes: 1.) this test assures v(br) ce0 > 12v
bfy181 ifag imm rpd d hir 3 of 4 v 2 , february 2011 electrical characteristics (continued) parameter symbol values unit min. typ. max. dc characteristics base - emitter forward voltage i e = 15 ma, i c = 0 v fbe - - 1 v dc current gain i c = 5 ma, v ce = 6 v h fe 55 100 175 - ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 500 mhz i c = 10 ma, v ce = 8 v, f = 500 mhz f t 6.5 - 7.5 8 - - ghz collector - base capacitance v cb = 10 v, v be = vbe = 0, f = 1 mhz c cb - 0.21 0. 29 pf collector - emitter capacitance v ce = 10 v, v be = vbe = 0, f = 1 mhz c ce - 0.34 - pf emitter - base capacitance v eb = 0.5v, v cb = vcb = 0, f = 1 mhz c eb - 0.45 0.6 pf noise figure i c = 4 ma, v ce = 5 v, f = 2 ghz, z s = z sopt f - 2.2 2.9 db po wer gain i c = 10 ma, v ce = 5v, f = 2 ghz z s = z sopt , z l = z lopt gma 1.) 13.5 14.5 - db transducer gain i c = 10 ma, v ce = 5 v, f = 2 ghz z s = z l = 50 ? |s 21e | 2 10 11 - db notes.: 1) , g s s k k ma ? ? ? 21 12 1 2 ( ) g s s ms ? 21 12
bfy181 ifag imm rpd d hir 4 of 4 v 2 , february 2011 micro - x1 package edition 20 11 - 0 2 published by infineon technologie s ag 85579 neubiberg, germany ? infineon technologies ag 2011 all rights reserved. attention please! the information given in this document sh all in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, in fineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non - infringement of intellectual property rights of an third party. information for further information on technology, deli very terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/ or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 1 2 3 4
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